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| Preliminary data BSP 315 P SIPMOS (R) Small-Signal-Transistor Features * P-Channel * Product Summary Drain source voltage Continuous drain current VDS ID 4 -60 0.8 -1.17 V A Enhancement mode Drain-Source on-state resistance RDS(on) * Avalanche rated * Logic Level * dv/dt rated 3 2 1 VPS05163 Type BSP 315 P Package SOT-223 Ordering Code Q67042-S4004 Pin 1 G Pin2/4 D PIN 3 S Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Continuous drain current Value -1.17 -0.94 Unit A ID T A = 25 C T A = 70 C Pulsed drain current ID puls EAS EAR dv/dt -4.68 24 0.18 6 kV/s mJ T A = 25 C Avalanche energy, single pulse I D = -1.17 A , V DD = -25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = -1.17 A, V DS = -48 V, di/dt = 200 A/s, T jmax = 150 C Gate source voltage Power dissipation VGS Ptot Tj , Tstg 20 1.8 -55...+150 55/150/56 V W C T A = 25 C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 1999-09-14 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. - BSP 315 P Unit max. 25 K/W K/W RthJS RthJA - - - 115 70 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. -1.5 max. -2 A -0.1 -10 -10 0.8 0.5 -1 -100 -100 1.4 0.8 nA V Unit V(BR)DSS VGS(th) IDSS -60 -1 VGS = 0 V, I D = -250 A Gate threshold voltage, VGS = VDS I D = -160 A Zero gate voltage drain current VDS = -60 V, V GS = 0 V, T j = 25 C VDS = -60 V, V GS = 0 V, T j = 125 C Gate-source leakage current IGSS RDS(on) RDS(on) - VGS = -20 V, VDS = 0 V Drain-Source on-state resistance VGS = -4.5 V, I D = -0.89 A Drain-Source on-state resistance VGS = -10 V, I D = -1.17 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-09-14 Preliminary data Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values min. Dynamic Characteristics Transconductance typ. BSP 315 P Unit max. gfs Ciss Coss Crss td(on) 0.7 - 1.4 130 40 17 24 160 50 21 36 S pF VDS2*I D*RDS(on)max , ID = -0.89 A Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18 Rise time tr - 9 14 VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18 Turn-off delay time td(off) - 32 48 VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18 Fall time tf - 19 28 VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18 Page 3 1999-09-14 Preliminary data Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values min. Dynamic Characteristics Gate to source charge typ. BSP 315 P Unit max. Qgs Qgd Qg V(plateau) - 0.7 1.8 5.2 -3.14 1.1 2.6 7.8 - nC VDD = -48 V, ID = -1.17 A Gate to drain charge VDD = -48 V, ID = -1.17 A Gate charge total VDD = -48 V, ID = -1.17 A, V GS = 0 to -10 V Gate plateau voltage V VDD = -48 V, ID = -1.17 A Parameter Reverse Diode Inverse diode continuous forward current Symbol min. Values typ. -0.97 30.5 36 max. -1.17 -4.68 -1.3 46 54 Unit IS ISM VSD trr Qrr - A T A = 25 C Inverse diode direct current,pulsed T A = 25 C Inverse diode forward voltage V ns C VGS = 0 V, I F = -1.17 A Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/s Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/s Page 4 1999-09-14 Preliminary data Power Dissipation Drain current BSP 315 P Ptot = f (TA) BSP 315 P ID = f(TA ) parameter :VGS -10V BSP 315 P 1.9 -1.3 W 1.6 1.4 A -1.1 -1.0 -0.9 Ptot ID C 1.2 1.0 0.8 -0.8 -0.7 -0.6 -0.5 0.6 0.4 0.2 0.0 0 -0.4 -0.3 -0.2 -0.1 20 40 60 80 100 120 160 0.0 0 20 40 60 80 100 120 C 160 TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) parameter : D = 0 , T A = 25 C -10 1 ZthJC = f (tp ) parameter : D = tp /T 10 2 tp = 280.0s BSP 315 P BSP 315 P K/W A 1 ms DS /I 10 1 D -10 0 DS ( R 10 ms Z thJC 10 0 D = 0.50 0.20 ID -10 -1 on ) = V 0.10 10 -1 single pulse DC 0.05 0.02 0.01 -10 -2 -1 -10 -10 0 -10 1 V -10 2 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Page 5 tp 1999-09-14 Preliminary data Typ. output characteristics BSP 315 P Typ. drain-source-on-resistance I D = f (VDS) parameter: tp = 80 s BSP 315 P RDS(on) = f (ID ) parameter: VGS BSP 315 P -2.8 Ptot = 2W j li k g f h e VGS [V] a -2.5 2.6 A -2.4 -2.2 -2.0 2.2 2.0 a b c d d b c d -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -8.0 -10.0 RDS(on) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 VGS [V] = a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 ID -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 a c e f g h i j k bl e g ih kj lk j f 0.2 -5.0 0.0 0.0 g h i -5.5 -6.0 -6.5 -7.0 l -8.0 -10.0 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -0.4 -0.8 -1.2 -1.6 -2.0 A -2.6 VDS ID Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance gfs = f(ID); Tj =25C parameter: gfs 2.5 VDS 2 x I D x RDS(on)max parameter: tp = 80 s -3.0 A S ID gfs V -2.0 1.5 -1.5 1.0 -1.0 0.5 -0.5 0.0 0.0 -1.0 -2.0 -3.0 -4.0 -6.0 0.0 0.0 0.5 1.0 1.5 2.0 A 3.0 VGS ID Page 6 1999-09-14 Preliminary data Drain-source on-resistance Gate threshold voltage BSP 315 P RDS(on) = f (T j) parameter:I D = -1.17 A, V GS = -10 V BSP 315 P VGS(th) = f (Tj) parameter: VGS = VDS , ID = -160 A -3.0 2.1 1.8 1.6 V RDS(on) V GS(th) 98% 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -60 C -2.0 typ 98% -1.5 2% typ -1.0 -0.5 -20 20 60 100 180 0.0 -60 -20 20 60 100 Tj 160 C Tj Typ. capacitances C = f(VDS) Parameter: VGS=0 V, f=1 MHz 10 3 Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s -10 1 BSP 315 P pF A 10 2 Ciss -10 0 C Coss Crss 10 1 -10 -1 IF Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 V -5 -10 -15 -20 -25 -30 -40 -10 -2 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VDS VSD Page 7 1999-09-14 Preliminary data Avalanche Energy EAS = f (Tj) parameter: ID = -1.17 A , V DD = -25 V RGS = 25 25 BSP 315 P Typ. gate charge VGS = f (QGate ) parameter: ID = -1.17 A pulsed BSP 315 P -16 V mJ -12 E AS VGS 15 -10 -8 10 0,2 VDS max 0,8 VDS max -6 -4 5 -2 0 25 45 65 85 105 125 C 165 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 nC 8.0 Tj QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP 315 P -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 V(BR)DSS -20 20 60 100 C 180 Tj Page 8 1999-09-14 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSP 315 P Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 1999-09-14 |
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